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| inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor MMBR920L description low noise nf= 2.4db typ. @ f= 500mhz high gain g pe = 15db typ. @ f= 500mhz applications designed for thick and thin-film ci rcuits using surface mount components and requiring low-noise , high-gain signal amp- lification at frequencies to 1 ghz. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 20 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 3 v i c collector current-continuous 35 ma p c collector power dissipation @t c = 25 0.35 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor MMBR920L electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma ; i b = 0 15 v v (br)cbo collector-base breakdown voltage i c = 0.1ma ; i e = 0 20 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma ; i c = 0 2 v i cbo collector cutoff current v cb = 10v; i e = 0 50 na h fe dc current gain i c = 14ma ; v ce = 10v 25 250 c ob output capacitance i e = 0 ; v cb = 10v; f= 1mhz 1.0 pf f t current-gain?bandwidth product i c = 14ma ; v ce = 10v; f= 0.5ghz 4.5 ghz nf noise figure i c = 2ma ; v ce = 10v; f= 0.5ghz 2.4 db nf noise figure i c = 2ma ; v ce = 10v; f= 1ghz 3.0 db g pe common-emitter amplifier power gain i c = 2ma ; v ce = 10v; f= 0.5ghz 15 db g pe common-emitter amplifier power gain i c = 2ma ; v ce = 10v; f= 1ghz 10 db |
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